• DocumentCode
    1703282
  • Title

    Improvements In Modfet Performance Realized Through ION Implantation In The Gate Region

  • Author

    Lam, C.S. ; Fonstad, C.G.

  • Author_Institution
    Massachusetts Institute of Technology
  • fYear
    1987
  • Firstpage
    89
  • Lastpage
    97
  • Keywords
    Contacts; Electrons; Epitaxial layers; Gallium arsenide; HEMTs; Ion implantation; MODFETs; Microwave devices; Rapid thermal annealing; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
  • Conference_Location
    Ithaca, NY, USA
  • Type

    conf

  • DOI
    10.1109/CORNEL.1987.721217
  • Filename
    721217
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1703282