DocumentCode :
1703388
Title :
Engineering Of Spike Doped HEMT Characteristics Through Recess Etch Considerations
Author :
Levy, H.M. ; Lee, H. ; Wu, C.J. ; Schneider, M. ; Kohn, E.
Author_Institution :
SIEMENS Corporate Research and Support, Inc.
fYear :
1987
Firstpage :
98
Lastpage :
107
Keywords :
Adhesives; Avalanche breakdown; Doping; Electric breakdown; Gallium arsenide; Gold; HEMTs; Resists; Silicon; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY, USA
Type :
conf
DOI :
10.1109/CORNEL.1987.721218
Filename :
721218
Link To Document :
بازگشت