DocumentCode
1703389
Title
Affordable diamond deposition technology
Author
Johnson, P.C. ; King, R. ; Scanlan, J.V. ; Whitehead, A.M.
Author_Institution
AEA Technol., Abingdon, UK
fYear
1993
fDate
11/4/1993 12:00:00 AM
Firstpage
42522
Abstract
While thin film diamond can be grown by a number of techniques which vary widely in their deposition rate, the technique using microwave plasma assisted chemical deposition (MPACVD) leads in the production of high-quality, high-purity films. Thus, despite its relatively low deposition rate, it remains attractive for many applications in electronics and optics which require high quality material. AEA Technology have a programme to develop, and make available commercially, diamond deposition equipment using MPACVD processes. The programme consists of two parts: develop an improved reactor for 4in (100 mm) diameter substrates, with 6 kW of microwave power at a frequency of 2.45 GHz; and develop a concept for deposition on 8in (200 mm) wafers at the same frequency. Progress with this work is described
Keywords
diamond; elemental semiconductors; plasma CVD; semiconductor growth; semiconductor thin films; 100 mm; 2.45 GHz; 200 mm; 6 kW; C; MPACVD; deposition rate; diamond thin film; high-purity films; microwave plasma assisted chemical deposition; microwave power; reactor; semiconductor; wafers;
fLanguage
English
Publisher
iet
Conference_Titel
Diamond in Electronics and Optics, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
280357
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