Title :
Atomic Layer Epitaxy
Author_Institution :
North Carolina State University
Keywords :
Ash; Atomic layer deposition; Epitaxial growth; Gallium arsenide; Large Hadron Collider; MOCVD; Molecular beam epitaxial growth; Process control; Semiconductor films; Substrates;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY, USA
DOI :
10.1109/CORNEL.1987.721219
