Title :
Microwave Operation Of Heterostructure Isolated-Gate FETs
Author :
Menk, G.E. ; Sadler, R.A. ; Balzan, M.L. ; Geissberger, A.E. ; Bah, I.J. ; Lee, H.
Author_Institution :
ITT Gallium Arsenide Technology Center
Keywords :
Electrodes; Gain measurement; Gallium arsenide; Gold; Metallization; Microwave FETs; Microwave devices; Noise figure; Noise measurement; Scattering parameters;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
DOI :
10.1109/CORNEL.1987.721222
