Title :
Ion-Implanted Self-Aligned-Gate Quantum-well Heterostructure FETs
Author :
Kiehl, R.A. ; Wright, S.L. ; Magerlein, J.H. ; Frank, D.J.
Author_Institution :
IBM T.J. Watson Research Center
Keywords :
Electrons; FETs; Gate leakage; HEMTs; Insulation; Leakage current; MISFETs; MODFET circuits; Quantum well devices; Quantum wells;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY, USA
DOI :
10.1109/CORNEL.1987.721223
