Title :
Planar Fully Ion-Implanted High Power InP MISFETs
Author :
Messick, L. ; Nguyen, R. ; Collins, D.A.
Author_Institution :
Naval Ocean Systems Center
Keywords :
Charge carrier density; FETs; Gallium arsenide; Implants; Indium phosphide; Insulation; MESFETs; MISFETs; Microwave devices; Millimeter wave technology;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
DOI :
10.1109/CORNEL.1987.721226
