Title :
Sub-100 nm Gate Length GaAs MESFETs Fabricated By Molecular Beam Epitaxy And Electron Beam Lithography
Author :
Allee, D.R. ; de la Houssaye, P.R. ; Schlom, D.G. ; Langley, B.W. ; Harris, J.S. ; Pease, R.F.W.
Author_Institution :
Stanford Solid State Laboratories
Keywords :
Electron beams; Fabrication; Gallium arsenide; Laboratories; Lithography; MESFETs; Metallization; Molecular beam epitaxial growth; Ohmic contacts; Resists;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY, USA
DOI :
10.1109/CORNEL.1987.721228
