• DocumentCode
    1703584
  • Title

    Sub-100 nm Gate Length GaAs MESFETs Fabricated By Molecular Beam Epitaxy And Electron Beam Lithography

  • Author

    Allee, D.R. ; de la Houssaye, P.R. ; Schlom, D.G. ; Langley, B.W. ; Harris, J.S. ; Pease, R.F.W.

  • Author_Institution
    Stanford Solid State Laboratories
  • fYear
    1987
  • Firstpage
    190
  • Lastpage
    198
  • Keywords
    Electron beams; Fabrication; Gallium arsenide; Laboratories; Lithography; MESFETs; Metallization; Molecular beam epitaxial growth; Ohmic contacts; Resists;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
  • Conference_Location
    Ithaca, NY, USA
  • Type

    conf

  • DOI
    10.1109/CORNEL.1987.721228
  • Filename
    721228
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1703584