DocumentCode :
1703639
Title :
Sensitivity Of The RF Performance Of GaAs Power FETs To Process-dependent Parameters
Author :
Khatibzadeh, M.A. ; Trew, R.J.
Author_Institution :
North Carolina State University
fYear :
1987
Firstpage :
209
Lastpage :
218
Keywords :
FETs; Gallium arsenide; Integrated circuit modeling; MESFETs; MMICs; Microwave circuits; Microwave theory and techniques; Radio frequency; Scattering parameters; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY, USA
Type :
conf
DOI :
10.1109/CORNEL.1987.721230
Filename :
721230
Link To Document :
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