Radiation hard strip detectors on oxygenated silicon

Recent results of the RD48 (ROSE) collaboration suggest the usage of oxygen enriched silicon for sensors operated in the harsh radiation environment of future high luminosity experiments. To investigate if the anticipated beneficial properties are still present after full processing of the wafers, strip detectors for the innermost ring of the ATLAS forward region have been fabricated on oxygen enriched silicon by CiS, Germany. These sensors, together with sensors on standard and thin substrates, have been exposed to 3·10¹⁴ 24 GeV/c protons/cm² at the CERN PS. We are presenting here the comparison between the sensors based on the CV measurements and the investigation of the charge collection efficiency obtained with a ⁹⁰Sr source and the analogue readout chip SCT128A.