Title :
Characterization of prototype BTeV silicon pixel sensors before and after irradiation
Author :
Coluccia, Maria R. ; Appel, J.A. ; Chiodini, G. ; Christian, D.C. ; Kwan, S.
Author_Institution :
Fermi Nat. Accel. Lab., Batavia, IL, USA
Abstract :
We report on measurements performed on silicon pixel sensor prototypes exposed to a 200 MeV proton beam at the Indiana University Cyclotron Facility. The sensors are of n+/n/p+ type with multi-guard ring structures and p-stop electrode isolation. Electrical characterization of such devices was performed before and after irradiation up to proton fluence of 4×1014 p cm-2. We tested pixel sensors fabricated from normal and oxygen-enriched silicon wafers and with two different p-stop isolation layouts: common p-stop and individual p-stop.
Keywords :
elemental semiconductors; p-n junctions; position sensitive particle detectors; proton effects; silicon radiation detectors; 200 MeV; Indiana University Cyclotron Facility; Si; electrical characterization; electrode isolation; multiguard ring structures; n type sensors; n+ type sensors; oxygen-enriched silicon wafers; p+ type sensors; proton beams; proton fluence; prototype silicon pixel sensors; stop isolation layouts; Conductivity; Degradation; Detectors; Electrodes; Prototypes; Sensor arrays; Sensor phenomena and characterization; Silicon; Testing; Voltage;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2001 IEEE
Print_ISBN :
0-7803-7324-3
DOI :
10.1109/NSSMIC.2001.1008523
