Characterization of prototype BTeV silicon pixel sensors before and after irradiation

Author

Coluccia, Maria R. ; Appel, J.A. ; Chiodini, G. ; Christian, D.C. ; Kwan, S.

Author_Institution

Fermi Nat. Accel. Lab., Batavia, IL, USA

Volume

1

fYear

2001

Firstpage

578

Abstract

We report on measurements performed on silicon pixel sensor prototypes exposed to a 200 MeV proton beam at the Indiana University Cyclotron Facility. The sensors are of n⁺/n/p⁺ type with multi-guard ring structures and p-stop electrode isolation. Electrical characterization of such devices was performed before and after irradiation up to proton fluence of 4×10¹⁴ p cm^-2. We tested pixel sensors fabricated from normal and oxygen-enriched silicon wafers and with two different p-stop isolation layouts: common p-stop and individual p-stop.

Keywords

elemental semiconductors; p-n junctions; position sensitive particle detectors; proton effects; silicon radiation detectors; 200 MeV; Indiana University Cyclotron Facility; Si; electrical characterization; electrode isolation; multiguard ring structures; n type sensors; n⁺ type sensors; oxygen-enriched silicon wafers; p⁺ type sensors; proton beams; proton fluence; prototype silicon pixel sensors; stop isolation layouts; Conductivity; Degradation; Detectors; Electrodes; Prototypes; Sensor arrays; Sensor phenomena and characterization; Silicon; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2001 IEEE

ISSN

1082-3654

Print_ISBN

0-7803-7324-3

Type

conf

DOI

10.1109/NSSMIC.2001.1008523

Filename

1008523