Title :
Characterization Of The AlGaAs/GaAs Tunneling Emitter Bipolar Transistor
Author :
Najjar, F.E. ; Radulescu, D.C. ; Chen, Y.K. ; Wicks, G.W. ; Tasker, P.J. ; Eastman, L.F.
Author_Institution :
Cornell University
Keywords :
Artificial intelligence; Bipolar transistors; Charge carrier processes; Effective mass; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Semiconductor superlattices; Substrates; Tunneling;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY, USA
DOI :
10.1109/CORNEL.1987.721238
