DocumentCode :
1703859
Title :
High Gain At Low Power in InGaAsP Double-Heterostructure Bipolar Transistors
Author :
Svilans, Mikelis N. ; Day, Derek J.
Author_Institution :
Bell-Northern Research
fYear :
1987
Firstpage :
299
Lastpage :
306
Keywords :
Bipolar transistors; DH-HEMTs; Double heterojunction bipolar transistors; Fabrication; Gold; Indium phosphide; Integrated circuit technology; Substrates; Wet etching; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY, USA
Type :
conf
DOI :
10.1109/CORNEL.1987.721240
Filename :
721240
Link To Document :
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