Title :
High Power-Added Efficiency Measured At 1.3 And 20 Ghz Using a GaAs Permeable Base Transistor*
Author :
Nichols, K.B. ; Hollis, Mark A. ; Bozler, C.O. ; Quddus, M.A. ; Mathews, R. ; Vera, Alonzo ; Rabe, Steffen ; Murphy, R.A.
Author_Institution :
Massachusetts Institute of Technology
Keywords :
FETs; Frequency; Gain; Gallium arsenide; Gratings; HEMTs; Heterojunction bipolar transistors; Permeability measurement; Power measurement; Tungsten;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
DOI :
10.1109/CORNEL.1987.721241
