• DocumentCode
    1703914
  • Title

    Synthesis of silicon nanowires

  • Author

    Yee, Wong Yuen ; Yahaya, Muhammad ; Salleh, Muhamad Mat ; Majlis, Burhanuddin Yeop

  • Author_Institution
    Inst. of Microengineering & Nanoelectronics, UKM, Selangor, Malaysia
  • fYear
    2004
  • Abstract
    The synthesis of silicon nanowires is described in this paper. Using self-assembly approach, nanowires were grown by annealing of gold-coated silicon substrate to temperature about 1000 C in nitrogen ambient. Si nanowires formed upon cooling of the melted Au-Si alloy by the N2 gas. The diameter of the nanowires range from 50 to 150 nm and their length more than tens of microns.
  • Keywords
    annealing; cooling; elemental semiconductors; gold; nanowires; self-assembly; silicon; 50 to 150 nm; Au-Si; annealing process; cooling process; gold-coated silicon substrate; self-assembly process; silicon nanowire synthesis; Annealing; Magnetic materials; Nanoelectronics; Nanowires; Nitrogen; Scanning electron microscopy; Self-assembly; Silicon; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
  • Print_ISBN
    0-7803-8658-2
  • Type

    conf

  • DOI
    10.1109/SMELEC.2004.1620909
  • Filename
    1620909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1703914