Title :
Quantum Transport Simulation Of A Resonant-Tunneling Diode
Author :
Frensley, William R.
Author_Institution :
Texas Instruments Incorporated
Keywords :
Boundary conditions; Distribution functions; Electrons; Equations; Quantum mechanics; Reservoirs; Resonant tunneling devices; Semiconductor diodes; Steady-state; Voltage;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY, USA
DOI :
10.1109/CORNEL.1987.721245
