DocumentCode :
1703988
Title :
Temperature Effects On AlGaAs/GaAs Double Barrier Diodes With High Peak-to-Valley Current Ratios
Author :
Huang, C.I. ; lkossi-Anastasiou, K. ; Paulus, M.J. ; Bozada, C.A. ; Stutz, C.E. ; Jones, R.L. ; Evans, K.R.
Author_Institution :
Wright Aeronautical Laboratories
fYear :
1987
Firstpage :
356
Lastpage :
364
Keywords :
Buffer layers; Diodes; Gallium arsenide; Laboratories; Low voltage; Molecular beam epitaxial growth; Silicon; Superlattices; Temperature; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY, USA
Type :
conf
DOI :
10.1109/CORNEL.1987.721246
Filename :
721246
Link To Document :
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