DocumentCode
1704042
Title
Simulation study of I-V characteristics of RTD with variation in Doping concentration
Author
Singh, Man Mohan ; Siddiqui, M.J. ; Khan, Aboo Bakar ; Thaseena, C.K.
Author_Institution
Dept. of Electron. Eng., AMU, Aligarh, India
fYear
2013
Firstpage
260
Lastpage
267
Abstract
In this paper we present the effect on I-V characteristics of GaAs/AlGaAs Resonant Tunneling Diode (RTD) as a function of doping concentration. This simulation study may be utilized to improve the performance of RTD at high frequencies. Furthermore, these characteristics provide a comparative relation with other parameters like barrier length and spacer layer. Simulation performed using Nextnano3 and Atlas tools confirm the various characteristics presented in this work.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; resonant tunnelling diodes; semiconductor doping; GaAs-AlGaAs; I-V characteristics; RTD; barrier length; doping concentration; resonant tunneling diode; spacer layer; IEEE Xplore; Portable document format; Device Simulation; Doping concentration; NEGF; Quantum Mechanics; RTD;
fLanguage
English
Publisher
ieee
Conference_Titel
Multimedia, Signal Processing and Communication Technologies (IMPACT), 2013 International Conference on
Conference_Location
Aligarh
Print_ISBN
978-1-4799-1202-5
Type
conf
DOI
10.1109/MSPCT.2013.6782131
Filename
6782131
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