DocumentCode :
1704058
Title :
Realization of perfect silicon corrugated diaphragm using KOH etching
Author :
Soin, Orhayati ; Majlis, Burhanuddin Yeop
Author_Institution :
Inst. of Microengineering & Nanoelectronics, Universiti Kebangsaan Malaysia, Selangor, Malaysia
fYear :
2004
Abstract :
This article presents corner compensation mask design in order to realize perfect silicon corrugated diaphragm using KOH etching technique. The corner undercutting of silicon (100) in KOH is quite serious and without compensation it is difficult to construct a complete convex corner structures since the silicon diaphragm is etched from both top and bottom directions in order to form the corrugated structure. The introduction of the additional mask layout for the protection of convex corners at all convex-mask geometry of the corrugated diaphragm during the KOH etching process has been proved by simulation to produce almost perfect square corners.
Keywords :
diaphragms; elemental semiconductors; etching; masks; micromachining; micromechanical devices; semiconductor process modelling; silicon; KOH etching technique; Si; convex corner structures; convex-mask geometry; corner compensation mask design; corner undercutting; corrugated diaphragm; Anisotropic magnetoresistance; Delay; Geometry; Micromachining; Nanoelectronics; Protection; Silicon; Solid modeling; Strips; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN :
0-7803-8658-2
Type :
conf
DOI :
10.1109/SMELEC.2004.1620913
Filename :
1620913
Link To Document :
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