• DocumentCode
    1704070
  • Title

    Impact of gate length and schottky layer variation on device performance of double δ-doped InAlAs/InGaAs HEMT

  • Author

    Khan, A.B. ; Siddiqui, M.J. ; Singh, Moirangthem Marjit ; Thaseena, C.K.

  • Author_Institution
    Dept. of Electron. Eng., AMU, Aligarh, India
  • fYear
    2013
  • Firstpage
    264
  • Lastpage
    267
  • Abstract
    In this paper we describes the impact of gate length and schottky layer variation of InP based double δ-doped InAlAs/InGaAs high electron mobility transistor (HEMT). We study the effect of gate length and schottky layer variation. To obtain the various effects we use Atlas and nextnano3 tools. We have performed the characterization studies on the various parameters like threshold voltage (Vth), cut-off frequency (fr) and transconductance (gm), electron density in the channel (ND).
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; HEMT; InAlAs-InGaAs; InP; Schottky layer variation; cut-off frequency; electron density; gate length; high electron mobility transistor; threshold voltage; transconductance; Cutoff frequency; HEMTs; Indium gallium arsenide; Logic gates; MODFETs; Transconductance; δ-doping; Gate Length; HEMT; Schottky Layer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Multimedia, Signal Processing and Communication Technologies (IMPACT), 2013 International Conference on
  • Conference_Location
    Aligarh
  • Print_ISBN
    978-1-4799-1202-5
  • Type

    conf

  • DOI
    10.1109/MSPCT.2013.6782132
  • Filename
    6782132
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1704070