Title :
Impact of gate length and schottky layer variation on device performance of double δ-doped InAlAs/InGaAs HEMT
Author :
Khan, A.B. ; Siddiqui, M.J. ; Singh, Moirangthem Marjit ; Thaseena, C.K.
Author_Institution :
Dept. of Electron. Eng., AMU, Aligarh, India
Abstract :
In this paper we describes the impact of gate length and schottky layer variation of InP based double δ-doped InAlAs/InGaAs high electron mobility transistor (HEMT). We study the effect of gate length and schottky layer variation. To obtain the various effects we use Atlas and nextnano3 tools. We have performed the characterization studies on the various parameters like threshold voltage (Vth), cut-off frequency (fr) and transconductance (gm), electron density in the channel (ND).
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; HEMT; InAlAs-InGaAs; InP; Schottky layer variation; cut-off frequency; electron density; gate length; high electron mobility transistor; threshold voltage; transconductance; Cutoff frequency; HEMTs; Indium gallium arsenide; Logic gates; MODFETs; Transconductance; δ-doping; Gate Length; HEMT; Schottky Layer;
Conference_Titel :
Multimedia, Signal Processing and Communication Technologies (IMPACT), 2013 International Conference on
Conference_Location :
Aligarh
Print_ISBN :
978-1-4799-1202-5
DOI :
10.1109/MSPCT.2013.6782132
