Multiple quantum well based lasing nanostructures: A review

In this paper we have reviewed recent experimental and Simulated results on multiple quantum well based lasing nanostructures. GaN/AlGaN and indium free AlGaN multiple quantum well based laser diodes are demonstrated. It is found that by controlling the well widths of GaN/AlGaN MQW laser diode, there is a limit to shift the lasing wavelength toward deeper ultraviolet region while indium free AlGaN MQW laser diode can have lasing emission at even shorter ultraviolet wavelength. Optimization of active layer structures for GaN/AlGaN MQW laser diodes are also discussed.