Title :
Comparison study of uniformly-doped and delta-doped Al0.22Ga0.78As/In0.22Ga0.78As pseudomorphic HEMTs
Author :
Kharuddin, K. N Mohd ; Majlis, B. Yeop
Author_Institution :
Inst. of Microeng. & Nanoelectron., Univ. Kebangsaan Malaysia, Selangor, Malaysia
Abstract :
Device performance of uniformly-doped and delta-doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors are investigated with 2D numerical simulator, ATLAS/Silvaco. Simulation results demonstrates superior performance for the delta-doped structure. The advantages shown by delta-doped structure include better electron confinement and reduced parasitic conduction which are manifested as higher transconductance and improved drain current.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor doping; ATLAS-Silvaco numerical simulator; Al0.22Ga0.78As-In0.22Ga0.78As; AlGaAs-InGaAs; delta-doped structure; electron confinement; parasitic conduction; pseudomorphic HEMT; uniformly-doped structure; Carrier confinement; Charge carriers; Doping; Electrons; Gallium arsenide; HEMTs; Indium gallium arsenide; Nanoelectronics; PHEMTs; Transconductance;
Conference_Titel :
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN :
0-7803-8658-2
DOI :
10.1109/SMELEC.2004.1620917
