DocumentCode
1704191
Title
Progress and outlook of lithography for semiconductor IC
Author
Lin, Burn J. ; Liu, R.G.
Author_Institution
TSMC, Ltd., Hsinchu, Taiwan
fYear
2009
Firstpage
133
Lastpage
140
Abstract
Progress of lithography from the lensless type to lens-based systems using different kinds of photon and electron beams is reported here. The stages of lithography development with their physical principles are linked to the corresponding impacts to IC designers to help them understand the reasons they are more and more restricted. From this vantage point, we look at the prospects of the lithography systems that will handle patterning for 32-nm half pitch and beyond in feasibility and cost.
Keywords
electron beam lithography; integrated circuit design; integrated circuit manufacture; photolithography; IC designer; electron beams lithography; half pitch patterning; photon beam lithography; semiconductor IC lithography; Costs; Electron beams; Lithography; Photonic integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2009. CICC '09. IEEE
Conference_Location
San Jose, CA
Print_ISBN
978-1-4244-4071-9
Electronic_ISBN
978-1-4244-4073-3
Type
conf
DOI
10.1109/CICC.2009.5280903
Filename
5280903
Link To Document