• DocumentCode
    1704191
  • Title

    Progress and outlook of lithography for semiconductor IC

  • Author

    Lin, Burn J. ; Liu, R.G.

  • Author_Institution
    TSMC, Ltd., Hsinchu, Taiwan
  • fYear
    2009
  • Firstpage
    133
  • Lastpage
    140
  • Abstract
    Progress of lithography from the lensless type to lens-based systems using different kinds of photon and electron beams is reported here. The stages of lithography development with their physical principles are linked to the corresponding impacts to IC designers to help them understand the reasons they are more and more restricted. From this vantage point, we look at the prospects of the lithography systems that will handle patterning for 32-nm half pitch and beyond in feasibility and cost.
  • Keywords
    electron beam lithography; integrated circuit design; integrated circuit manufacture; photolithography; IC designer; electron beams lithography; half pitch patterning; photon beam lithography; semiconductor IC lithography; Costs; Electron beams; Lithography; Photonic integrated circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 2009. CICC '09. IEEE
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4244-4071-9
  • Electronic_ISBN
    978-1-4244-4073-3
  • Type

    conf

  • DOI
    10.1109/CICC.2009.5280903
  • Filename
    5280903