Title :
Gain investigation on strained InGaA1As/InP lasing nano-heterostructure
Author :
Lal, Pyare ; Yadav, Rajat ; Sharma, Mukesh ; Rahman, Farin ; Siddiqui, M.J. ; Alvi, P.A.
Author_Institution :
Dept. of Phys., Banasthali Univ., Tonk, India
Abstract :
In this paper we have reported various lasing characteristics of strained InGaAlAs/InP nano-heterostructure. Under the effect of strain, behavior of material gain with lasing wavelength and current density has been studied and reported. In addition, differential gain and refractive index change with carriers has also been calculated. The maximum material gain for compressive strained heterostructure appears at the wavelength of 1.55 μm while for tensile strained heterostructure, it appears at the wavelength of 1.70 μm, The achieved results show that compressive strained structure is very important in the optical fiber based communication systems due to low attenuation.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; nanostructured materials; optical fibre communication; quantum well lasers; refractive index; InGaAlAs-InP; communication systems; compressive strained heterostructure; current density; differential gain; gain investigation; lasing nanoheterostructure; lasing wavelength; optical fiber; refractive index; tensile strained heterostructure; wavelength 1.55 mum; wavelength 1.70 mum; Charge carrier density; Current density; Indium phosphide; Lasers; Refractive index; Strain; Anti-guiding-factor; Current density; Material gain; Refractive index change;
Conference_Titel :
Multimedia, Signal Processing and Communication Technologies (IMPACT), 2013 International Conference on
Conference_Location :
Aligarh
Print_ISBN :
978-1-4799-1202-5
DOI :
10.1109/MSPCT.2013.6782137
