Title :
The etching of GaAs, AlGaAs and InGaAs in different chemicals in p-HEMT mesa layers
Author :
Guan, Lee Hock ; Yusof, Ashaari ; Dolah, Asban ; Jusoh, Mohd Sazli ; Yahya, Mohamed Razman ; Majlis, Burhanuddin Yeop
Author_Institution :
Microelectron. Unit, Telekom R&D Sdn. Bhd., Selangor, Malaysia
Abstract :
The etching of mesa layer in the fabrication of p-HEMT devices was studied and analyzed. The chemical compositions were varied to study the etch rate effect on the various materials in the mesa layer. The etching rates and selectivity of the H3PO4:H2O2:H2O, NH4OH:H2O2:H2O and H2SO4:H2O2:H2O is compared among GaAs, AlGaAs and InGaAs materials. The results show that the chemical ratio of 1:1:500 and 1:1:250 are suitable in the mesa etching based on the selectivity between AlGaAs over GaAs and AlGaAs over InGaAs.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; high electron mobility transistors; indium compounds; organic compounds; AlGaAs; GaAs; H2SO4:H2O2:H2O compounds; H3PO4:H2O2:H2O compounds; InGaAs; NH4OH:H2O2:H2O compounds; chemical compositions; chemical ratio; etch rate effect; etching selectivity; mesa layer etching; p-HEMT devices; Anisotropic magnetoresistance; Chemical technology; Etching; Fabrication; Gallium arsenide; Indium gallium arsenide; Lithography; Resists; Semiconductor materials; Temperature dependence;
Conference_Titel :
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN :
0-7803-8658-2
DOI :
10.1109/SMELEC.2004.1620919
