Title :
A single-inductor 0.35µm CMOS energy-investing piezoelectric harvester
Author :
Dongwon Kwon ; Rincon-Mora, Gabriel A.
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Because miniaturized systems store little energy, their lifespans are often short. Fortunately, vibrations are consistent and abundant in many applications, so ambient kinetic energy can be a viable source. Vibrations induce the charges in piezoelectric transducers to build electrostatic forces that damp vibrations and convert kinetic energy into the electrical domain. The shunting switches and switched-inductor circuit of bridge rectifiers in [1-2] increase this output energy by extending the damping (i.e., harvesting) duration within a vibration cycle. Because the output voltages of bridge rectifiers clamp and limit the electrical damping forces built, switched-inductor converters in [3-4], whose damping voltages can exceed their rectified outputs, draw more power from vibrations. Still, electrical-mechanical coupling factors in tiny transducers are low, so electrical damping forces (i.e., voltages) remain weak. Investing energy into the transducer can increase this force, but unlike in [5-6], which demand multiple inductors and high-voltage sources, the system presented here invests energy with only one inductor at low voltages.
Keywords :
CMOS integrated circuits; energy harvesting; inductors; piezoelectric transducers; switching convertors; vibrations; ambient kinetic energy; bridge rectifier clamp; damp vibrations; electrical damping forces; electrical domain; electrical-mechanical coupling factors; electrostatic forces; high-voltage sources; piezoelectric transducers; shunting switches; single-inductor CMOS energy-investing piezoelectric harvester; size 0.35 mum; switched-inductor circuit; switched-inductor converters; Damping; Inductors; Investment; Logic gates; Manganese; Switches; Vibrations;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4515-6
DOI :
10.1109/ISSCC.2013.6487645