Title :
Characterization of wet etching process for In0.53Ga0.47As epitaxy layer using surface profiling technique
Author :
Ahmad, Mohd Hairul Faizal ; Ehsan, Abang Annuar ; Guan, Lee Hock ; Shaari, Sahbudin
Author_Institution :
Inst. of Micro Eng. & Nanoelectron., Univ. Kebanesaan Malaysia, Selangor, Malaysia
Abstract :
Characterization of the wet etching process for an InGaAs epitaxy layer using surface profiling technique is reported. Surface profiling technique allows a 2D reconstruction view of the etched regions showing both the vertical and horizontal dimensions accurately. The etchant used is a mixture of phosphoric acid (H3PO4), hydrogen peroxide (H2O2) and deionised water (H2O) in a ratio of 1-1-8. Several etch times are selected which ranges from 1.5, 2, 4, 7 and 10 minutes. The etching depths are measured using Tencor P-12 surface profiler tool. The results showed that the etched depth of InGaAs is proportional to the etching time.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; phosphorus compounds; semiconductor epitaxial layers; water; 1.5 mins; 10 mins; 2 mins; 2D reconstruction; 4 mins; 7 mins; H2O; H2O2; In0.53Ga0.47As; InGaAs; Tencor P-12 surface profiler tool; deionised water; etching depths; hydrogen peroxide; phosphoric acid; surface profiling technique; wet etching process; Chemicals; Dry etching; Epitaxial growth; Fabrication; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Resists; Surface reconstruction; Wet etching;
Conference_Titel :
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN :
0-7803-8658-2
DOI :
10.1109/SMELEC.2004.1620932
