DocumentCode :
1704654
Title :
Effect of Pr substitution on magnetoresistance in La23/Ba13/MnO3 perovskite
Author :
Halim, S.A. ; Huda, A. ; Lim, K.P. ; Lee, O.J. ; Saion, E.B. ; Yusoff, W.M.D.W. ; Cik, Abdulah
Author_Institution :
Dept. of Phys., Universiti Putra Malaysia, Selangor, Malaysia
fYear :
2004
Abstract :
Polycrystalline of (La1-xPrx)0.67Ba0.33MnO3 with x = 0, 0.167, 0.33, 0.5, 0.67, 0.833, 1 have been prepared using solid state reaction. The effect of substituting praseodymium at La-site on magnetoresistance (MR) effect has been investigated. The electrical property, was determined by using standard four-point probe resistivity measurement in a temperature range of 30 K to 300 K. Metal-insulator transition temperature (Tp) shifted to lower temperatures with the increases of Pr doping with the value of >300, 270, 250, 226, 202, 186 and 158 K for x = 0, 0.167, 0.33, 0.5, 0.67, 0.833, 1, respectively. Overall, MR drops slowly when temperature rises. All doping concentration give small variation range (5% to 25%) except for x=1.0, where this sample show significantly higher MR value at all temperature as compared to other samples. The highest MR value of 38% is observed at 270K. In the semiconducting portion, activation energy (Ea) has been investigated. The Ea increases as the doping concentration increases.
Keywords :
barium compounds; chemical exchanges; colossal magnetoresistance; doping; electrical resistivity; lanthanum compounds; manganese compounds; metal-insulator transition; praseodymium; (La1-xPrx)0.67Ba0.33MnO3 polycrystalline; 30 to 300 K; La0..66Ba0.33MnO3; LaPrBaMnO; activation energy; doping concentration; electrical property; four-point probe resistivity measurement; magnetoresistance effect; metal-insulator transition temperature; polycrystalline perovskite; praseodymium doping; praseodymium substitution; solid state reaction; Conductivity measurement; Magnetoresistance; Measurement standards; Metal-insulator structures; Probes; Semiconductivity; Semiconductor device doping; Solid state circuits; Temperature distribution; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN :
0-7803-8658-2
Type :
conf
DOI :
10.1109/SMELEC.2004.1620935
Filename :
1620935
Link To Document :
بازگشت