Title :
A silicon BiCMOS single-chip UHF receiver design
Author :
Xu, Yangsheng ; Shi, Chunqi ; Jin, Wei ; Yu, Hui ; Tao, Yonggang ; Hong, Liang ; Lai, Zoiigsheng
Author_Institution :
Inst. of Microelectron. Circuits & Syst., East China Normal Univ., Shanghai, China
Abstract :
A single-chip UHF receiver integrated with PLL working at ISM band from 290 MHz to 470 MHz is presented. It operates from a single 5 V supply with a nominal current consumption of only 6.5 mA (with all parts of the receiver are active). The IC requires only a low frequency reference clock (crystal oscillator), a varactor diode, and a few standard passive elements to operate fully, satisfying almost all of the low power radio regulations. The LNA has a 1.56 dB noise figure, 15.2 dB power gain and 8 dBm IIP3. The mixer has a 9.3 dB SSB noise figure with 5 dBm IIP3. The PLL achieves a phase noise of -99.7 dBc/Hz at 100 kHz offset with 433 MHz carrier frequency. The RF receiver was implemented in a 0.8 μm, 12 GHz fT (NPN) Si BiCMOS production technology.
Keywords :
BiCMOS analogue integrated circuits; UHF amplifiers; UHF mixers; crystal oscillators; phase locked loops; phase noise; radio receivers; silicon; varactors; 0.8 micron; 1.56 dB; 12 GHz; 15.2 dB; 290 to 470 MHz; 5 V; 6.5 mA; 9.3 dB; ISM band; LNA; PLL; Si; UHF receiver design; crystal oscillator; low frequency reference clock; low power radio regulations; mixer; passive elements; phase noise; silicon BiCMOS single-chip; varactor diode; BiCMOS integrated circuits; Clocks; Frequency; Noise figure; Oscillators; Phase locked loops; Radiofrequency integrated circuits; Receivers; Silicon; Varactors;
Conference_Titel :
Communications, Circuits and Systems, 2005. Proceedings. 2005 International Conference on
Print_ISBN :
0-7803-9015-6
DOI :
10.1109/ICCCAS.2005.1495344