Ion sensing improvements of hafnium oxide by nitrogen incorporation

Author

Lai, Chao-Sung ; Yang, Chia-Ming ; Lue, Cheng-En ; Cheng-En Lue ; Wang, Chih-Yao ; Ko, H.P. ; Wang, Tzu-Ming

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2004

Abstract

This is the first time that hafnium oxynitride (HfO_xN_y) have been applied to hydrogen ion sensing technology. HfO_xN_y and HfO₂ were prepared in different ratio Ar/N₂/O₂ gas mixture by sputter with hafnium target. The sensitivity for all samples could be improved for at least 3.3mV/pH by 12 hours R.O. water immersion. The optimized condition for HfO_xN_y-EIS was sputtering in the ambient of N₂ ratio 10% and achieved highest sensitivity (56.64mV/pH) and lowest drift (1.42mV/hr) and hysteresis (1.7mV). This material and process could also improve membrane thermal stability and integrate easily with standard CMOS process.

Keywords

gas mixtures; hafnium compounds; ion sensitive field effect transistors; nitrogen; sputtering; 1.7 mV; 12 hours; CMOS process; HfO₂; HfO_xN_y; gas mixture; hydrogen ion sensing technology; ion sensing improvement; membrane thermal stability; water immersion; Argon; Biomembranes; Capacitance-voltage characteristics; Dielectric materials; Hafnium oxide; Hydrogen; Hysteresis; Nitrogen; Sputtering; Surface fitting;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on

Print_ISBN

0-7803-8658-2

Type

conf

DOI

10.1109/SMELEC.2004.1620950

Filename

1620950