Title :
A 0.7W fully integrated 42GHz power amplifier with 10% PAE in 0.13µm SiGe BiCMOS
Author :
Wei Tai ; Carley, L.R. ; Ricketts, David S.
Author_Institution :
Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
In this paper, we report a fully integrated power amplifier (PA) architecture that combines the power of 16 on-chip PAs using a 16-way zero-degree combiner to achieve an output power of 0.7W with a power-added efficiency (PAE) of 10% at 42GHz and a -3dB bandwidth of 9GHz. This is 2.6 times more output power than a recently reported millimeter-Wave (mm-Wave) silicon-based PA [1]. The circuit is a fully integrated mm-Wave PA achieving a leading output power approaching 1 Watt in a silicon process.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; millimetre wave power amplifiers; semiconductor materials; BiCMOS; PA architecture; PAE; SiGe; bandwidth 9 GHz; efficiency 10 percent; frequency 42 GHz; fully integrated power amplifier; millimeter-wave silicon-based PA; on-chip PA; power 0.7 W; power-added efficiency; silicon process; Frequency measurement; Impedance; Inductors; Power amplifiers; Power generation; Silicon; Transmission line measurements;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4515-6
DOI :
10.1109/ISSCC.2013.6487673
