Title :
An analytical threshold voltage model of NMOSFETs with hot-carrier induced interface charge effect
Author :
Huang, Kuo-Yin ; Ho, C.S. ; Tang, Ming ; Liou, Juin J.
Author_Institution :
R&D/Device Div., ProMOS Technol., Hsinchu, China
Abstract :
An analytical threshold voltage model of NMOSFETs including the effect of hot-carrier-induced interface charges is presented. A step function describing the interface charge distribution along the channel is used to account for the hot carrier induced damage, and a pseudo-2D method is applied to derive the surface potential. The threshold voltage model is then developed by solving the gate-to-source voltage at the onset of surface inversion where the minimum surface potential equals the channel potential. Both the DIBL and body effects are included in the present model as well. Model is successfully verified using simulation data obtained from TCAD (technology-based computer-aided design).
Keywords :
MOSFET; hot carriers; interface phenomena; technology CAD (electronics); DIBL; NMOSFET; TCAD; body effect; channel potential; gate-to-source voltage; hot-carrier; interface charge distribution; interface charge effect; pseudo-2D method; surface inversion; surface potential; technology-based computer-aided design; threshold voltage model; Analytical models; Computational modeling; Computer simulation; Degradation; Design automation; Function approximation; Hot carrier effects; Hot carriers; MOSFETs; Threshold voltage;
Conference_Titel :
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN :
0-7803-8658-2
DOI :
10.1109/SMELEC.2004.1620958
