Title :
A 28nm High-κ metal-gate single-chip communications processor with 1.5GHz dual-core application processor and LTE/HSPA+-capable baseband processor
Author :
Fujigaya, Masaki ; Sakamoto, Naohisa ; Koike, Toshiaki ; Irita, T. ; Wakahara, Kohei ; Matsuyama, Takashi ; Hasegawa, Kiyotomo ; Saito, Takashi ; Fukuda, Akira ; Teranishi, K. ; Fukuoka, Kazuki ; Maeda, Noboru ; Nii, Koji ; Kataoka, Takeshi ; Hattori, Tos
Author_Institution :
Renesas Mobile, Tokyo, Japan
Abstract :
The increase in the use and number of smartphone devices is causing heavy data traffic volumes on existing 3G mobile wireless networks. LTE, often referred to as 4G, offers true mobile broadband. It is a new network and access technology that provides new spectrum resources, much increased spectral efficiency, higher throughputs (150Mb/s with higher rates to come), at lower latency and it uses an IP-based infrastructure. LTE is the solution to mitigate the traffic load issue and it is being rolled out around the world. The proposed communication processor R-Mobile U2 (RMU2) achieves single-chip integration of a 1.5GHz dual-core application processor and a triple mode (GSM/WCDMA/LTE) base-band processor. Key design highlights of the RMU2 are: 1) A 28nm HKMG high-performance and low-leakage (HPL) CMOS bulk process achieves an optimal balance between both low leakage current and high performance. 2) A CPU clock control mechanism, called the “power saver”, limits the CPU power so as not to exceed a threshold level and to reduce IR drop. 3) The internal power domain is separated into 33 sub-blocks with I/O NMOS power switches [1] to minimize leakage current of any unused sub-block. 4) A dual-mode low-leakage SRAM [2] achieves low standby current in addition to conventional memory characteristics.
Keywords :
3G mobile communication; CMOS integrated circuits; Long Term Evolution; SRAM chips; broadband networks; high altitude stratospheric platforms; high-k dielectric thin films; leakage currents; microprocessor chips; power semiconductor switches; telecommunication traffic; 3G mobile wireless networks; 4G mobile wireless networks; CPU clock control mechanism; HKMG high-performance; I/O NMOS power switches; IP-based infrastructure; IR drop reduction; LTE-HSPA+-capable baseband processor; R-Mobile U2 communication processor; RMU2 communication processor; data traffic volumes; dual-core application processor; dual-mode low-leakage SRAM; frequency 1.5 GHz; high-κ metal-gate single-chip communications processor; low leakage current; low standby current; low-leakage CMOS bulk process; memory characteristics; mobile broadband network; power saver; size 28 nm; smart phone devices; spectral efficiency; spectrum resources; triple mode baseband processor; Clocks; Control systems; Leakage currents; MOS devices; Mobile communication; Program processors; Random access memory;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4515-6
DOI :
10.1109/ISSCC.2013.6487679