• DocumentCode
    1705363
  • Title

    Comparative study of buried insulator materials in LDMOSFETs

  • Author

    Moghadam, Hamid Amini ; Orouji, Ali A. ; Dideban, A.

  • Author_Institution
    Electr. Eng. Dept., Semnan Univ., Semnan, Iran
  • fYear
    2010
  • Firstpage
    444
  • Lastpage
    446
  • Abstract
    In this paper we study the influence of buried insulating materials including SiO2, Si3N4, and AlN in the breakdown voltage. An inversion layer forms under insulating layer that prevent from the electric field spreading into the substrate and therefore the breakdown voltage of device decreases. The inversion layer is stronger at materials with high dielectric constants and hence the breakdown voltage significantly decreases.
  • Keywords
    permittivity; power MOSFET; semiconductor device breakdown; AlN; LDMOSFET; Si3N4; SiO2; breakdown voltage; buried insulator material; dielectric constant; electric field; inversion layer; Breakdown voltage; Dielectric constant; Electric fields; Insulators; Silicon on insulator technology; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Technologies in Electrical and Electronics Engineering (SIBIRCON), 2010 IEEE Region 8 International Conference on
  • Conference_Location
    Listvyanka
  • Print_ISBN
    978-1-4244-7625-1
  • Type

    conf

  • DOI
    10.1109/SIBIRCON.2010.5555119
  • Filename
    5555119
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1705363