Title :
Optimized the breakdown voltage and specific on-resistance of double RESURF TMOS
Author :
Chen, Wanjun ; Zhang, Bo ; Li, Zhaoji ; Xiang, Junli
Author_Institution :
Center of IC Design, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
In this paper, a novel TMOS with very deep trench double RESURF structure to achieve ultra-low specific on resistance is proposed and optimized. The proposed structure has a deep P column (up to the N+ drain) under the trench gate electrode. The effects of the depth of P column, widths and doping concentrations of both N column and P column are studied by analysis and simulation. According to our analysis and optimization, we have developed a 200 V class low on resistance TMOS with Ron,sp=172 mΩ.mm2 at VGS=10 V, which shows a reduction in the specific on resistance by 70% compared with the conventional TMOS.
Keywords :
doping profiles; optimisation; power MOSFET; semiconductor device breakdown; 10 V; 200 V; breakdown voltage optimization; column width effects; deep trench structure; doping concentrations; double RESURF TMOS; sub-trench gate electrode deep P column; trench gate MOSFET; ultra-low specific on resistance; Design optimization; Doping; Electric resistance; Electrodes; Filling; Low voltage; MOSFET circuits; Power MOSFET; Power semiconductor devices; Silicon;
Conference_Titel :
Communications, Circuits and Systems, 2005. Proceedings. 2005 International Conference on
Print_ISBN :
0-7803-9015-6
DOI :
10.1109/ICCCAS.2005.1495365
