Title :
A novel E-SIMOX SOI high voltage device structure with shielding trench
Author :
Luo, Xiaorong ; Zhang, Bo ; Li, Zhaoji
Author_Institution :
Coll. of Microelectron. & Solid-State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A new E-SIMOX high voltage device structure with shielding trench (ST) and its breakdown mechanism with a self-adapted interface charge are proposed in this paper. Based on the full continuity principle of electric displacement, the interface charges enhance the vertical electric field of the buried oxide remarkably and reduce the vertical electric field of the Si layer, which shields the Si layer from the high electric field. The vertical electric field and breakdown characteristics are researched for different device structure parameters, with ST, using a 2D device simulator. The electric field of the buried oxide increases from below 100 V/μm to about 600 V/μm. This breaks through the limitation of breakdown voltage of normal SOI devices and expands the application field of SOI devices.
Keywords :
SIMOX; power MOSFET; semiconductor device breakdown; silicon-on-insulator; E-SIMOX device; SOI LDMOS; SOI device breakdown voltage limitations; Si-SiO2; breakdown mechanism; buried oxide vertical electric field; electric displacement full continuity principle; high voltage device structure; self-adapted interface charge; shielding trench; Bonding; Dielectric devices; Doping; Educational institutions; Electric breakdown; Gaussian processes; Large Hadron Collider; Silicon; Solid state circuits; Voltage;
Conference_Titel :
Communications, Circuits and Systems, 2005. Proceedings. 2005 International Conference on
Print_ISBN :
0-7803-9015-6
DOI :
10.1109/ICCCAS.2005.1495368
