A novel analytical model for the potential and the electric field distribution of TFSOI power device

Author

Luo, Xiaorong ; Li, Zhaoji ; Zhang, Bo

Author_Institution

Coll. of Microelectron. & Solid-State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

2

fYear

2005

Lastpage

1411

Abstract

A novel united analytical model for the potential and the electric field distribution of TFSOI power device with a uniform or linear doping is proposed. The interface charges in the interface of Si/field oxide and Si/buried oxide are taken into account in the model. Based on the 2D Poisson equation, the analytical solutions for the surface potential and electric field distribution are investigated for different device structure parameters. The validity of this model is verified by comparison with the numerical results by 2D device simulator MEDICI.

Keywords

Poisson equation; doping profiles; power semiconductor devices; semiconductor device models; silicon-on-insulator; surface potential; 2D Poisson equation; SOI power devices; TFSOI RESURF device; buried oxide interface charges; drift region linear doping profile; electric field distribution; field oxide interface charges; high voltage devices; surface potential distribution; uniform doping profile; Analytical models; Boundary conditions; Dielectric constant; Doping profiles; Educational institutions; Electric potential; Microelectronics; Poisson equations; Semiconductor process modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems, 2005. Proceedings. 2005 International Conference on

Print_ISBN

0-7803-9015-6

Type

conf

DOI

10.1109/ICCCAS.2005.1495370

Filename

1495370