S-Doped GaSe for sub-microwave generation

Author

Luo, C.W. ; Ku, S.A. ; Chu, W.C. ; Andreev, Yu.M. ; Atuchin, V.V. ; Beizel, N.F. ; Lanskii, G.V. ; Morozov, A.N. ; Zuev, V.V.

Author_Institution

Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2010

Firstpage

576

Lastpage

580

Abstract

The near IR and sub-microwave range optical properties of AgGaS₂-doped GaSe (GaSe:AgGaS₂) grown in accordance with chemical formula [2(GaSe)]_1-x:(AgGaS₂)_x, x=0.1, in charge composition, were studied in comparison with that in 2 wt% and 10.2 wt% S-doped GaSe (GaSe:S) to reveal the potentials for phase matching and frequency conversion from near IR into sub-microwave range by down-conversion of fs Ti:Sapphire laser emission. The composition of grown GaSe:AgGaS₂ crystal is identified as GaSe:S (2.19 mass%). The crystal possesses 25% higher hardness comparing to that of GaSe:S(2 mass%) grown by traditional technique, can be cut and polished, and is useful in applied systems. It was found that GaSe:S possesses the best set of physical properties for sub-microwave and microwave generation among doped GaSe crystals.

Keywords

doping; gallium compounds; infrared spectra; optical properties; GaSe:AgGaS₂; GaSe:S; S-doped GaSe; Ti:sapphire laser emission; frequency conversion; near IR range optical properties; phase matching; sub-microwave generation; sub-microwave range optical properties; Crystals; Frequency conversion; Gas lasers; Gases; Nonlinear optics; Physics;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Technologies in Electrical and Electronics Engineering (SIBIRCON), 2010 IEEE Region 8 International Conference on

Conference_Location

Listvyanka

Print_ISBN

978-1-4244-7625-1

Type

conf

DOI

10.1109/SIBIRCON.2010.5555139

Filename

5555139