S-Doped GaSe for sub-microwave generation

The near IR and sub-microwave range optical properties of AgGaS₂-doped GaSe (GaSe:AgGaS₂) grown in accordance with chemical formula [2(GaSe)]_1-x:(AgGaS₂)_x, x=0.1, in charge composition, were studied in comparison with that in 2 wt% and 10.2 wt% S-doped GaSe (GaSe:S) to reveal the potentials for phase matching and frequency conversion from near IR into sub-microwave range by down-conversion of fs Ti:Sapphire laser emission. The composition of grown GaSe:AgGaS₂ crystal is identified as GaSe:S (2.19 mass%). The crystal possesses 25% higher hardness comparing to that of GaSe:S(2 mass%) grown by traditional technique, can be cut and polished, and is useful in applied systems. It was found that GaSe:S possesses the best set of physical properties for sub-microwave and microwave generation among doped GaSe crystals.