DocumentCode
1706017
Title
40nm embedded SG-MONOS flash macros for automotive with 160MHz random access for code and endurance over 10M cycles for data
Author
Kono, Takeshi ; Ito, Takao ; Tsuruda, T. ; Nishiyama, T. ; Nagasawa, T. ; Ogawa, Tomomi ; Kawashima, Yoshiya ; Hidaka, Hideto ; Yamauchi, Takashi
Author_Institution
Renesas Electron., Itami, Japan
fYear
2013
Firstpage
212
Lastpage
213
Abstract
This paper presents 40nm eFlash macros for automotive. There are three key features; 1) a 40nm SG-MONOS cell scaled to the next generation of [1]; 2) a fast random-read-access (over 160MHz) and the developed sense amplifier (SA); and, 3) circuit techniques for reliable and fast P/E operations even at the junction temperature (Tj) of 170°C.
Keywords
automotive electronics; flash memories; macros; random-access storage; P-E operations; SA; automotive; circuit techniques; code; embedded SG-MONOS flash macros; endurance; fast random-read-access; frequency 160 MHz; junction temperature; program-erase cycling; sense amplifier; size 40 nm; temperature 170 degC; Automotive engineering; Computer architecture; Flash memories; Integrated circuit reliability; Microprocessors; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-4673-4515-6
Type
conf
DOI
10.1109/ISSCC.2013.6487704
Filename
6487704
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