Title :
40nm embedded SG-MONOS flash macros for automotive with 160MHz random access for code and endurance over 10M cycles for data
Author :
Kono, Takeshi ; Ito, Takao ; Tsuruda, T. ; Nishiyama, T. ; Nagasawa, T. ; Ogawa, Tomomi ; Kawashima, Yoshiya ; Hidaka, Hideto ; Yamauchi, Takashi
Author_Institution :
Renesas Electron., Itami, Japan
Abstract :
This paper presents 40nm eFlash macros for automotive. There are three key features; 1) a 40nm SG-MONOS cell scaled to the next generation of [1]; 2) a fast random-read-access (over 160MHz) and the developed sense amplifier (SA); and, 3) circuit techniques for reliable and fast P/E operations even at the junction temperature (Tj) of 170°C.
Keywords :
automotive electronics; flash memories; macros; random-access storage; P-E operations; SA; automotive; circuit techniques; code; embedded SG-MONOS flash macros; endurance; fast random-read-access; frequency 160 MHz; junction temperature; program-erase cycling; sense amplifier; size 40 nm; temperature 170 degC; Automotive engineering; Computer architecture; Flash memories; Integrated circuit reliability; Microprocessors; Transistors;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4515-6
DOI :
10.1109/ISSCC.2013.6487704
