DocumentCode
1706818
Title
Frequency domain identification of NPB transporting properties of organic semiconductor based on particle swarm optimization algorithm
Author
Liu Rui-lan ; Wang Xu-liang ; Tang Chao
Author_Institution
Coll. of Autom., Nanjing Univ. of Posts & Telecommun., Nanjing, China
fYear
2013
Firstpage
1815
Lastpage
1818
Abstract
In order to study the carrier transporting properties in organic semiconductors (OSC), a single device with structure ITO/NPB/Ag is made, and the corresponding admittance model in theory is built.A group of impedance samples under different DC bias voltages of the device are obtained by small sinusoidal signal frequency test method. The fitness function of model parameters identification problem which considers both the real and imaginary parts of OSC impedance is defined. The particle swarm optimization (PSO) algorithm is used to identify dispersion coefficient M, α and hole mobility time τdc. The experiment results show that values of impedance´s real and imaginary parts fitted from parameters which are identified by PSO are very close to practical measured values, and the hole mobility time τdc satisfies exponent relation with DC bias voltage.
Keywords
electric impedance; hole mobility; organic semiconductors; particle swarm optimisation; DC bias voltages; NPB transporting properties; carrier transporting properties; dispersion coefficient; frequency domain identification; hole mobility time; impedance; organic semiconductor; particle swarm optimization algorithm; Educational institutions; Electronic mail; Impedance; Indium tin oxide; Organic semiconductors; Particle swarm optimization; Spectroscopy; frequency domain identification; impedance spectrum; mobility ratio; organic semiconductor; particle swarm optimization (PSO);
fLanguage
English
Publisher
ieee
Conference_Titel
Control Conference (CCC), 2013 32nd Chinese
Conference_Location
Xi´an
Type
conf
Filename
6639722
Link To Document