DocumentCode :
1707291
Title :
A single-chip 24 GHz SiGe BiCMOS transceiver for low cost FMCW airborne radars
Author :
Saunders, Dave ; Bingham, Steve ; Menon, Gaurav ; Crockett, Don ; Tor, Josh ; Mende, Ralph ; Behrens, Marc ; Jain, Nitin ; Alexanian, Angelos ; Rajanish
Author_Institution :
US Monolithics, Gilbert, AZ, USA
fYear :
2009
Firstpage :
244
Lastpage :
247
Abstract :
The design and measured results of a highly integrated FMCW radar transceiver are presented. The transceiver includes a transmitter with +7 dBm output power and -82 dBc/Hz phase noise at 100 kHz, dual I/Q receivers with 10dB NF and 18 dB gain, PLL, 15-bit DAC, instrumentation amplifiers, LDO regulators, and a serial programming interface - all designed to operate from -40 to +125°C at 3.5 V, 275 mA. Fabricated using Jazz Semiconductor´s 0.18 ¿m SiGe BiCMOS process and packaged in a 32-pin 5 mm × 5 mm QFN, this RFIC has the highest level of integration at 24 GHz known to the authors.
Keywords :
BiCMOS integrated circuits; CW radar; FM radar; Ge-Si alloys; airborne radar; radiofrequency integrated circuits; semiconductor materials; transceivers; BiCMOS transceivers; CW radar; FM radar; LDO regulators; QFN; RFIC; SiGe; airborne radar; frequency 24 GHz; gain 18 dB; noise figure 10 dB; serial programming interface; Airborne radar; BiCMOS integrated circuits; Costs; Germanium silicon alloys; Power amplifiers; Power generation; Radar measurements; Silicon germanium; Transceivers; Transmitters; CW radar; Chirp radar; FM radar; airborne radar; digital-analog conversion; operational amplifiers; phase locked loops; radar receivers; radar transmitters; voltage controlled oscillator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Aerospace & Electronics Conference (NAECON), Proceedings of the IEEE 2009 National
Conference_Location :
Dayton, OH
Print_ISBN :
978-1-4244-4494-6
Electronic_ISBN :
978-1-4244-4495-3
Type :
conf
DOI :
10.1109/NAECON.2009.5426619
Filename :
5426619
Link To Document :
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