Title :
A 5.7mW/Gb/s 24-to-240Ω 1.6Gb/s thin-oxide DDR transmitter with 1.9-to-7.6V/ns clock-feathering slew-rate control in 22nm CMOS
Author :
Kossel, Marcel ; Menolfi, Christian ; Toifl, Thomas ; Francese, Pier Andrea ; Brandli, Matthias ; Buchmann, Peter ; Kull, Lukas ; Andersen, Toke Meyer ; Morf, Thomas
Author_Institution :
IBM, Rüschlikon, Switzerland
Abstract :
The signal integrity (SI) of double data rate (DDR) memory links is affected by signal reflections due to the multi-drop configuration of heavily loaded memory busses. Variable-impedance drivers, on-die termination (ODT), feed-forward equalization (FFE) and slew-rate (SR) control are typically implemented in DDR transmitters to address SI issues. In particular for multi-module, multi-rank configurations where speed throttling must be applied, SR control turns out to be most effective to combat reflections and crosstalk. Slewed signal edges reduce the spectral content above the bit rate frequency, whereas FFE dampens lower frequencies to compensate for channel loss, which may, however, be less of a problem at throttled data rates.
Keywords :
CMOS integrated circuits; crosstalk; driver circuits; random-access storage; system buses; CMOS; DDR memory link; FFE; ODT; SI; SR control; channel loss; clock-feathering slew-rate control; crosstalk; double data rate memory link; feed-forward equalization; loaded memory busses; multidrop configuration; multimodule configuration; multirank configuration; on-die termination; resistance 24 ohm to 240 ohm; signal integrity; signal reflection; spectral content reduction; thin-oxide DDR transmitter; variable-impedance driver; CMOS integrated circuits; Clocks; Delays; Generators; Impedance; Transmitters; Vectors;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4515-6
DOI :
10.1109/ISSCC.2013.6487748