A proposal for modeling substrate coupling in Si-MMICs and its experimental verification up to 40 GHz

Author

Pfost, M. ; Rein, H.M.

Author_Institution

Ruhr-Univ., Bochum, Germany

fYear

1997

Firstpage

52

Lastpage

55

Abstract

Semi-physical equivalent circuits for modeling substrate coupling in the design of Si bipolar MMICs are proposed. The model parameters can be calculated for arbitrary layout configurations. Some of them are determined from area- and length-specific capacitances, measured on test structures, while others are calculated by use of a new numerical simulator called SUSI. Both the simulator and the equivalent circuits have been experimentally verified up to 40 GHz. For this, special test structures were designed and fabricated

Keywords

bipolar MMIC; circuit analysis computing; elemental semiconductors; equivalent circuits; integrated circuit layout; integrated circuit modelling; integrated circuit testing; silicon; 40 GHz; IC modeling; SUSI; Si; Si bipolar MMICs; model parameters; numerical simulator; semi-physical equivalent circuits; substrate coupling; test structures; Area measurement; Capacitance measurement; Circuit simulation; Circuit testing; Coupling circuits; Equivalent circuits; Length measurement; MMICs; Numerical simulation; Proposals;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-3243-1

Type

conf

DOI

10.1109/ICMTS.1997.589332

Filename

589332