DocumentCode :
1707487
Title :
7GHz L1 cache SRAMs for the 32nm zEnterprise™ EC12 processor
Author :
Davis, J.D. ; Bunce, P.A. ; Henderson, D.M. ; Chan, Y.H. ; Srinivasan, Uma ; Rodko, D. ; Patel, Pragati ; Knips, T.J. ; Werner, T.
Author_Institution :
IBM, Poughkeepsie, NY, USA
fYear :
2013
Firstpage :
324
Lastpage :
325
Abstract :
The L1 cache for the 5.5 GHz 32nm zEnterprise™ EC12 processor requires SRAM designs that make aggressive use of dynamic circuitry. As technology has scaled and transistor counts have grown, random device variability [1] and power limitations have become significant challenges. In particular, random device-variability-induced pulse shrinkage and misalignment in dynamic signals must be carefully addressed. Described here are a series of new design approaches enabling L1 cache SRAM operation at 7GHz, including a 3-level bitline hierarchy, decreased dynamic path lengths, localized read enables, and a power-savings mechanism in which selective columns can be partially powered down.
Keywords :
SRAM chips; cache storage; microprocessor chips; transistor circuits; L1 cache SRAM; dynamic circuitry; frequency 5.5 GHz; frequency 7 GHz; power-savings mechanism; size 32 nm; transistor; zEnterprise EC12 processor; Banking; Conferences; Latches; Logic gates; Random access memory; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
978-1-4673-4515-6
Type :
conf
DOI :
10.1109/ISSCC.2013.6487754
Filename :
6487754
Link To Document :
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