Title :
2.4 V-operated enhancement-mode power PHEMTs for personal handy-phone system application
Author :
Chen, S.H. ; Chang, E.Y. ; Lin, Y.C. ; Lee, C.S.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
6/23/1905 12:00:00 AM
Abstract :
Enhancement-mode pseudomorphic high electron mobility transistors (E-PHEMTs) were developed for low voltage wireless communication applications. Under drain bias of 3.6 V, the device delivered a high output power density of 265.25 mW/mm (29.5 dBm) with a power-added-efficiency (PAE) of 50.54%. Under 1.9 GHz π/4-shifted quadrature phase shift keying (QPSK) modulation signal, the 3.36 mm devices meet personal handy-phone system (PHS) specification at an output power level of 22.42 dB with PAE of 35.12% under 2.4 V drain bias. The E-PHEMTs developed are adequate for low-voltage-operated PHS application.
Keywords :
UHF field effect transistors; cellular radio; current density; power HEMT; 1.9 GHz; 2.4 to 3.6 V; 3.36 mm; 50.54 percent; AlGaAs-InGaAs; LV wireless communication applications; PHS specification; QPSK modulation signal; enhancement-mode power PHEMTs; high output power density; low voltage applications; personal handy-phone system specification; pseudomorphic PHEMT; pseudomorphic high electron mobility transistors; quadrature phase shift keying; Electron mobility; Gold; HEMTs; Low voltage; Molecular beam epitaxial growth; PHEMTs; Power generation; Threshold voltage; Transconductance; Wireless communication;
Conference_Titel :
Microwave and Optoelectronics Conference, 2001. IMOC 2001.Proceedings of the 2001 SBMO/IEEE MTT-S International
Print_ISBN :
0-7803-7065-1
DOI :
10.1109/SBMOMO.2001.1008734
