Title :
Design and performance of Gilbert cell mixer MMICs with GaAs PHEMT technology
Author :
Martins, E. ; Bastida, E.M. ; Swart, J.W.
Author_Institution :
FEG/UNESP, Brazil
fDate :
6/23/1905 12:00:00 AM
Abstract :
The design and performance of a Gilbert cell mixer, using GaAs PHEMT technology is presented. It was designed to operate as a down converter, with an RF frequency of 1.9 GHz, a LO of 2.0 GHz and IF of 100 MHz. A voltage gain of over 11.8 dB and an input reflection coefficient of smaller than -14 dB, without a matching network, were obtained.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC mixers; UHF frequency convertors; UHF mixers; gallium arsenide; 1.9 GHz; 100 MHz; 11.8 dB; 2.0 GHz; GaAs; Gilbert cell mixer; MMICs; PHEMT technology; RF frequency; down converter; input reflection coefficient; voltage gain; Circuit topology; Frequency conversion; Gallium arsenide; HEMTs; Integrated circuit noise; MMICs; MODFETs; Mixers; PHEMTs; Voltage;
Conference_Titel :
Microwave and Optoelectronics Conference, 2001. IMOC 2001.Proceedings of the 2001 SBMO/IEEE MTT-S International
Print_ISBN :
0-7803-7065-1
DOI :
10.1109/SBMOMO.2001.1008758
