Comparison of variable gain LNA MMICs at c-band using GaAs enhancement, depletion or deep-depletion MESFETs

Author

Ellinger, Frank ; Vogt, Rolf ; Bachtold, Werner

Author_Institution

Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland

Volume

1

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

249

Abstract

In this paper, the transmission phase variation, the noise figure and the large signal performance versus gain or cascode VGLNAs (variable gain low noise amplifiers) are compared, using either enhancement, depletion or deep-depletion MESFETs. To allow objective comparisons, the same circuit topology, bias current and bias voltage are used for the three C-band GaAs MMICs (microwave monolithic integrated circuits). The VGLNAs with depletion FETs are superior in terms of transmission phase constancy and large signal performance, whereas the VGLNA with enhancement FETs provides higher maximum gain and lower noise figure.

Keywords

MESFET integrated circuits; MMIC amplifiers; circuit optimisation; integrated circuit noise; intermodulation distortion; C-band; bias current; bias voltage; cascode VGLNAs; circuit topology; deep-depletion MESFETs; depletion MESFETs; enhancement MESFETs; large signal performance; noise figure; transmission phase constancy; transmission phase variation; variable gain LNA MMICs; Circuit topology; FETs; Gallium arsenide; Integrated circuit noise; Low-noise amplifiers; MESFETs; MMICs; Noise figure; Performance gain; Phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 2001. IMOC 2001.Proceedings of the 2001 SBMO/IEEE MTT-S International

Print_ISBN

0-7803-7065-1

Type

conf

DOI

10.1109/SBMOMO.2001.1008759

Filename

1008759