Title :
A 1/4-inch 8Mpixel back-illuminated stacked CMOS image sensor
Author :
Sukegawa, S. ; Umebayashi, T. ; Nakajima, T. ; Kawanobe, H. ; Koseki, K. ; Hirota, I. ; Haruta, T. ; Kasai, Makoto ; Fukumoto, K. ; Wakano, T. ; Inoue, Ken ; Takahashi, Hiroki ; Nagano, Takeshi ; Nitta, Yoshinori ; Hirayama, Takatsugu ; Fukushima, Norishi
Author_Institution :
Sony, Atsugi, Japan
Abstract :
In recent years, cellphone cameras have come to require much more diversification and increased functionalities, due to the strong growth of the smartphone market. In addition to the image quality, speed, and pixel counts that conventional image sensors require, there is high demand for new functions that can respond to various photo-taking scenes. We developed a stacked CMOS image sensor (CIS), composed of conventional back-illuminated (BI) image-sensor technology and 65nm standard logic technology.
Keywords :
CMOS image sensors; CMOS logic circuits; mobile handsets; 1-4-inch 8Mpixel back-illuminated stacked CMOS image sensor; BI image-sensor technology; CIS; cellphone cameras; diversification; image quality; photo-taking scenes; pixel count; size 65 nm; smartphone market; speed count; standard logic technology; Bismuth; CMOS image sensors; Image quality; Motion pictures; Noise; Through-silicon vias; Transistors;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4515-6
DOI :
10.1109/ISSCC.2013.6487825
