An 80-W packaged GaN high power amplifier for CW operation in the 13.75–14.5 GHz band

Author

Imai, Suguru ; Maehara, Hiroaki ; Koyanagi, Mitsumasa ; Ohtsuka, Hirofumi ; Ohta, Atsushi ; Yamanaka, Keiji ; Inoue, Akira ; Fukumoto, H.

Author_Institution

Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

A high power internally matched GaN-HEMT amplifier at Ku-Band was successfully developed. In order to achieve high output power over the targeted bandwidth, a new balancing network is added to the gate side matching circuit. At 24 V drain supply voltage, the HPA delivers 80W of CW RF power with a PAE exceeding 22% over the 13.75-14.5 GHz frequency range. To the best of authors´ knowledge, this output power is state-of-the-art for CW operation in this frequency band.

Keywords

III-V semiconductors; differential amplifiers; gallium compounds; high electron mobility transistors; microwave field effect transistors; microwave power amplifiers; wide band gap semiconductors; CW RF power; GaN; Ku-band; balancing network; frequency 13.75 GHz to 14.5 GHz; gate side matching circuit; high power internally matched HEMT amplifier; packaged high power amplifier; power 80 W; voltage 24 V; Area measurement; Frequency measurement; Gain measurement; Gallium nitride; Heating; Peak to average power ratio; Radio frequency; GaN-HEMT; Kuband; Power amplifier; unbalance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848263

Filename

6848263