Title :
Ultrafast photodetector based on InP/GaInAs heterostructure
Author :
Averine, Stanislav ; Chan, Yuen Chuen ; Lam, Yee Loy ; Bondarenko, Oleg ; Sachot, Remy
Author_Institution :
Sch. of Electr. Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
6/23/1905 12:00:00 AM
Abstract :
Impulse response of a heterobarrier metal-semiconductor-metal photodiode to a short laser pulse is computed and discussed in terms of the distribution of photogenerated carriers and electric fields. We show that the use of heterobarrier structure greatly enhances the response speed of InP/GaInAs MSM-photodetector.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; optical communication equipment; photodetectors; semiconductor heterojunctions; transient response; InP-GaInAs; InP/GaInAs MSM photodetector; heterobarrier metal-semiconductor-metal photodiode; short laser pulse; simulation; ultrafast photodetector; Bonding; Boundary conditions; Charge carrier processes; Computational modeling; Electrodes; Fingers; Indium phosphide; Laser modes; Photodetectors; Photodiodes;
Conference_Titel :
Microwave and Optoelectronics Conference, 2001. IMOC 2001.Proceedings of the 2001 SBMO/IEEE MTT-S International
Print_ISBN :
0-7803-7065-1
DOI :
10.1109/SBMOMO.2001.1008787
