DocumentCode
1709733
Title
Ultrafast photodetector based on InP/GaInAs heterostructure
Author
Averine, Stanislav ; Chan, Yuen Chuen ; Lam, Yee Loy ; Bondarenko, Oleg ; Sachot, Remy
Author_Institution
Sch. of Electr. Electron. Eng., Nanyang Technol. Univ., Singapore
Volume
1
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
377
Abstract
Impulse response of a heterobarrier metal-semiconductor-metal photodiode to a short laser pulse is computed and discussed in terms of the distribution of photogenerated carriers and electric fields. We show that the use of heterobarrier structure greatly enhances the response speed of InP/GaInAs MSM-photodetector.
Keywords
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; optical communication equipment; photodetectors; semiconductor heterojunctions; transient response; InP-GaInAs; InP/GaInAs MSM photodetector; heterobarrier metal-semiconductor-metal photodiode; short laser pulse; simulation; ultrafast photodetector; Bonding; Boundary conditions; Charge carrier processes; Computational modeling; Electrodes; Fingers; Indium phosphide; Laser modes; Photodetectors; Photodiodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Optoelectronics Conference, 2001. IMOC 2001.Proceedings of the 2001 SBMO/IEEE MTT-S International
Print_ISBN
0-7803-7065-1
Type
conf
DOI
10.1109/SBMOMO.2001.1008787
Filename
1008787
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